The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

Apr. 16, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kun-Huei Lin, Tainan, TW;

Yun-Wei Cheng, Tainan, TW;

Chun-Hao Chou, Tainan, TW;

Kuo-Cheng Lee, Tainan, TW;

Chun-Wei Chia, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/335 (2011.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 29/4236 (2013.01); H04N 5/335 (2013.01); H01L 2924/13081 (2013.01);
Abstract

An IC structure includes a substrate region having a first doping type and including an upper surface, first and second regions within the substrate region, each of the first and second regions having a second doping type opposite the first doping type, and a gate conductor including a plurality of conductive protrusions extending into the substrate region in a direction perpendicular to a plane of the upper surface. The conductive protrusions are electrically connected to each other, and at least a portion of each conductive protrusion is positioned between the first and second regions.


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