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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11521891 B1

PDFFull Text
Date of Patent:
Dec. 06, 2022

Filed:

Jun. 06, 2021

Semiconductor device comprising a deep trench isolation structure and a trap rich isolation structure in a substrate and a method of making the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Purakh Raj Verma, Singapore, SG;

Chia-Huei Lin, Hsinchu, TW;

Kuo-Yuh Yang, Hsinchu County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Nilufa Rahim

Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/761 (2006.01); H01L 21/311 (2006.01); H01L 21/763 (2006.01); H01L 21/764 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76205 (2013.01); H01L 21/31144 (2013.01); H01L 21/761 (2013.01); H01L 21/763 (2013.01); H01L 21/764 (2013.01); H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 21/823481 (2013.01); H01L 27/088 (2013.01); H01L 29/0649 (2013.01); H01L 29/66575 (2013.01); H01L 29/1083 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor device includes: a metal-oxide semiconductor (MOS) transistor on a substrate; a deep trench isolation structure in the substrate and around the MOS transistor; and a trap rich isolation structure in the substrate and surrounding the deep trench isolation structure. Preferably, the deep trench isolation structure includes a liner in the substrate and an insulating layer on the liner, in which the top surfaces of the liner and the insulating layer are coplanar. The trap rich isolation structure is made of undoped polysilicon and the trap rich isolation structure includes a ring surrounding the deep trench isolation structure according to a top view.

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