The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Oct. 09, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsin-Hsiang Tseng, Changhua County, TW;

Chih-Fei Lee, Tainan, TW;

Chia-Pin Cheng, Kaohsiung, TW;

Fu-Cheng Chang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/0232 (2014.01); H01L 27/146 (2006.01); H01L 31/112 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02162 (2013.01); H01L 27/14643 (2013.01); H01L 27/14683 (2013.01); H01L 31/0232 (2013.01); H01L 31/1125 (2013.01); Y02E 10/50 (2013.01); Y02P 70/50 (2015.11);
Abstract

A semiconductor device includes a semiconductor substrate, a photo sensing region, and a plurality of nanostructures. The semiconductor substrate has a first dopant. The photo sensing region is embedded in the semiconductor substrate, has a top surface level with a top surface of the semiconductor substrate, and has a second dopant that is of a different conductivity type than the first dopant. The plurality of nanostructures is on the photo sensing region and is made of a material the same as the photo sensing region.


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