The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Mar. 10, 2020
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Pouya Hashemi, Purchase, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Alexander Reznicek, Troy, NY (US);
Karthik Balakrishnan, Scarsdale, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/0243 (2013.01); H01L 21/0245 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02494 (2013.01); H01L 21/02502 (2013.01); H01L 21/02516 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 29/0669 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/42376 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66659 (2013.01); H01L 29/66742 (2013.01); H01L 29/78603 (2013.01); H01L 21/02499 (2013.01); H01L 29/78642 (2013.01);
Abstract
A tilted nanowire structure is provided which has an increased gate length as compared with a horizontally oriented semiconductor nanowire at the same pitch. Such a structure avoids complexity required for vertical transistors and can be fabricated on a bulk semiconductor substrate without significantly changing/modifying standard transistor fabrication processing.