The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

Jan. 06, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jialiang Wang, Santa Clara, CA (US);

Susmit Singha Roy, Sunnyvale, CA (US);

Abhijit Basu Mallick, Fremont, CA (US);

Nitin K. Ingle, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 23/532 (2006.01); C23C 16/26 (2006.01); C01B 32/184 (2017.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); C01B 32/184 (2017.08); C23C 16/26 (2013.01); C23C 16/45536 (2013.01); H01L 21/02104 (2013.01); H01L 21/02115 (2013.01); H01L 23/53276 (2013.01);
Abstract

Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.


Find Patent Forward Citations

Wang, Jialiang. (2022). Low temperature graphene growth (U.S. Patent No. 11515163). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11515163

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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