The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Sep. 22, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chen-Liang Chu, Hsin-Chu, TW;

Ta-Yuan Kung, New Taipei, TW;

Ker-Hsiao Huo, Hsinchu County, TW;

Yi-Huan Chen, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 23/522 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7836 (2013.01); H01L 23/5226 (2013.01); H01L 29/0615 (2013.01); H01L 29/1045 (2013.01); H01L 29/665 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01);
Abstract

A semiconductor structure is disclosed. The semiconductor structure includes: a substrate of a first conductivity; a first region of the first conductivity formed in the substrate; a second region of the first conductivity formed in the first region, wherein the second region has a higher doping density than the first region; a source region of a second conductivity formed in the second region; a drain region of the second conductivity formed in the substrate; a pickup region of the first conductivity formed in the second region and adjacent to the source region; and a resist protective oxide (RPO) layer formed on a top surface of the second region. An associated fabricating method is also disclosed.


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