The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Jun. 24, 2020
Applicant:

Mediatek Inc., Hsinchu, TW;

Inventors:

Yen-Yao Chi, Hsinchu, TW;

Nai-Wei Liu, Hsinchu, TW;

Tzu-Hung Lin, Hsinchu, TW;

Assignee:

MEDIATEK INC., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01Q 1/22 (2006.01); H01Q 1/38 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/20 (2013.01); H01Q 1/2283 (2013.01); H01Q 1/38 (2013.01); H01L 2223/6672 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/214 (2013.01);
Abstract

A semiconductor package structure is provided. The semiconductor package structure includes an antenna device and semiconductor package. The antenna device includes a conductive pattern layer including a first antenna element, formed in an insulating substrate and adjacent to a first surface of the insulating substrate. The antenna device also includes a second antenna element formed on a second surface of the insulating substrate opposite the first surface. The semiconductor package includes a redistribution layer (RDL) structure bonded and electrically connected to the conductive pattern layer. The semiconductor package also includes a first semiconductor die electrically connected to the RDL structure, and an encapsulating layer formed on the RDL structure and surrounding the first semiconductor die.


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