The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Jul. 27, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Shu-Wei Chung, Hsinchu, TW;

Yen-Sen Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 1/16 (2006.01); H01L 49/02 (2006.01); H05K 1/11 (2006.01); G06F 30/392 (2020.01);
U.S. Cl.
CPC ...
H05K 1/162 (2013.01); G06F 30/392 (2020.01); H01L 28/60 (2013.01); H05K 1/115 (2013.01);
Abstract

An integrated circuit (IC) device according to the present disclosure includes a substrate including a first surface and a second surface opposing the first surface, a redistribution layer disposed over the first surface and including a conductive feature, a passivation structure disposed over the redistribution layer, a metal-insulator-metal (MIM) capacitor embedded in the passivation structure, a dummy MIM feature embedded in the passivation structure and including an opening, a top contact pad over the passivation structure, a contact via extending between the conductive feature and the top contact pad, and a through via extending through the passivation structure and the substrate. The dummy MIM feature is spaced away from the MIM capacitor and the through via extends through the opening of the dummy MIM feature without contacting the dummy MIM feature.


Find Patent Forward Citations

Loading…