The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Dec. 23, 2020
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Chun-Chen Yeh, Danbury, CT (US);
Tenko Yamashita, Schenectady, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for manufacturing a semiconductor device includes forming a plurality of semiconductor layers on a semiconductor substrate, and forming a plurality of gate structures spaced apart from each other on the semiconductor layers. The semiconductor layers are patterned into a plurality of patterned stacks spaced apart from each other, wherein the plurality of patterned stacks are under the plurality of gate structures. The method also includes forming a plurality of sacrificial spacers on lateral sides of the plurality of gate structures, and growing a plurality of source/drain regions. The source/drain regions are adjacent the patterned stacks and include a plurality of pillar portions formed on lateral sides of the sacrificial spacers. The sacrificial spacers and the plurality of pillar portions are removed.