The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

May. 11, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chih-Hsin Yang, Hsinchu, TW;

Yen-Ming Chen, Hsin-Chu County, TW;

Feng-Cheng Yang, Hsinchu County, TW;

Tsung-Lin Lee, Hsinchu, TW;

Wei-Yang Lee, Taipei, TW;

Dian-Hau Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/165 (2006.01); H01L 29/49 (2006.01); G06F 30/392 (2020.01); H01L 21/764 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); G06F 119/18 (2020.01);
U.S. Cl.
CPC ...
H01L 29/4991 (2013.01); G06F 30/392 (2020.01); H01L 21/764 (2013.01); H01L 21/823821 (2013.01); H01L 21/823864 (2013.01); H01L 27/0924 (2013.01); H01L 29/6653 (2013.01); G06F 2119/18 (2020.01);
Abstract

A semiconductor device includes a substrate. A gate structure is disposed over the substrate in a vertical direction. The gate structure extends in a first horizontal direction. An air spacer is disposed adjacent to a first portion of the gate structure in a second horizontal direction that is different from the first horizontal direction. The air spacer has a vertical boundary in a cross-sectional side view defined by the vertical direction and the first horizontal direction.


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