The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2022
Filed:
Dec. 09, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventor:
Su-Jen Sung, Zhubei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 29/417 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/76804 (2013.01); H01L 21/76807 (2013.01); H01L 21/76877 (2013.01); H01L 21/76883 (2013.01); H01L 21/76895 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 29/41725 (2013.01); H01L 29/41775 (2013.01); H01L 29/42376 (2013.01); H01L 21/76834 (2013.01); H01L 21/76897 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An apparatus comprises a first metal feature in a first dielectric layer over a substrate, wherein a sidewall portion of the first dielectric layer is over a top surface of the first metal feature, a second dielectric layer over the first dielectric layer and a second metal feature extending through the second dielectric layer, wherein a bottom of a first portion of the second metal feature is in contact with the top surface of the first metal feature and a bottom of a second portion of the second metal feature is in contact with the sidewall portion of the first dielectric layer.