The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Feb. 28, 2020
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/31 (2006.01); H01L 37/04 (2006.01); H01L 27/11 (2006.01); H01J 37/317 (2006.01); H01J 37/04 (2006.01); H01L 27/112 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3177 (2013.01); H01J 37/045 (2013.01); H01J 37/3175 (2013.01); H01L 27/1104 (2013.01); H01L 27/11253 (2013.01);
Abstract

A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising: exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.


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