The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Aug. 17, 2020
Applicant:

Dialog Semiconductor (Uk) Limited, London, GB;

Inventors:

Habeeb Mohiuddin Mohammed, Weilhelm an der Teck, DE;

Rajesh Subraya Aiyandra, Denkendorf, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/14 (2013.01); H01L 23/3192 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 23/3114 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02321 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/2075 (2013.01); H01L 2924/20641 (2013.01); H01L 2924/20646 (2013.01); H01L 2924/20752 (2013.01); H01L 2924/30101 (2013.01); H01L 2924/30105 (2013.01); H01L 2924/30107 (2013.01);
Abstract

A multi-pin wafer level chip scale package is achieved. One or more solder pillars and one or more solder blocks are formed on a silicon wafer wherein the one or more solder pillars and the one or more solder blocks all have a top surface in a same horizontal plane. A pillar metal layer underlies the one or more solder pillars and electrically contacts the one or more solder pillars with the silicon wafer through an opening in a polymer layer over a passivation layer. A block metal layer underlies the one or more solder blocks and electrically contacts the one or more solder pillars with the silicon wafer through a plurality of via openings through the polymer layer over the passivation layer wherein the block metal layer is thicker than the pillar metal layer.


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