The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Jan. 13, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chung-Hui Chen, Hsinchu, TW;

Tzu Ching Chang, Dali, TW;

Wan-Te Chen, Danshui Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/392 (2020.01); H01L 23/522 (2006.01); G03F 1/70 (2012.01); G06F 30/3953 (2020.01); G06F 30/398 (2020.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); G03F 1/70 (2013.01); G06F 30/398 (2020.01); G06F 30/3953 (2020.01); H01L 23/5226 (2013.01);
Abstract

A semiconductor device includes: an active area in a transistor layer; contact-source/drain (CSD) conductors in the transistor layer; gate conductors in the transistor layer, and interleaved with the CSD conductors; VG structures in the transistor layer, and over the active area; and a first gate-signal-carrying (GSC) conductor in an M_1st layer that is over the transistor layer, and that is over the active area; and wherein long axes correspondingly of the active area and the first GSC conductor extend substantially in a first direction; and long axes correspondingly of the CSD conductors and the gate conductors extend substantially in a second direction, the second direction being substantially perpendicular to the first direction.


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