The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Oct. 18, 2020
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chun-Hung Chen, Tainan, TW;
Ming-Tse Lin, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/64 (2006.01); H01L 23/48 (2006.01); H01L 21/48 (2006.01); H01L 27/01 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/486 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/49827 (2013.01); H01L 23/642 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 27/01 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/16113 (2013.01); H01L 2224/16147 (2013.01);
Abstract
A semiconductor structure is disclosed. The semiconductor structure includes an interposer substrate having an upper surface and a lower surface that is opposite to the upper surface. A guard ring is formed in the interposer substrate and surrounds a device region of the interposer substrate. At least a through-silicon via is formed in the interposer substrate. An end of the guard ring and an end of the through-silicon via that are near the upper surface of the interposer substrate are flush with each other.