The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2022

Filed:

Nov. 21, 2019
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Purushottam Kumar, Hillsboro, OR (US);

Adrien LaVoie, Newberg, OR (US);

Hu Kang, Tualatin, OR (US);

Jun Qian, Sherwood, OR (US);

Tuan Nguyen, Beaverton, OR (US);

Ye Wang, Lake Oswego, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45542 (2013.01); C23C 16/45527 (2013.01); C23C 16/45536 (2013.01);
Abstract

Methods of depositing uniform films on substrates using multi-cyclic atomic layer deposition techniques are described. Methods involve varying one or more parameter values from cycle to cycle to tailor the deposition profile. For example, some methods involve repeating a first ALD cycle using a first carrier gas flow rate during precursor exposure and a second ALD cycle using a second carrier gas flow rate during precursor exposure. Some methods involve repeating a first ALD cycle using a first duration of precursor exposure and a second ALD cycle using a second duration of precursor exposure.


Find Patent Forward Citations

Loading…