The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

Dec. 08, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Injo Ok, Loudonville, NY (US);

Ruqiang Bao, Niskayuna, NY (US);

Andrew Herbert Simon, Fishkill, NY (US);

Kevin W. Brew, Niskayuna, NY (US);

Nicole Saulnier, Slingerlands, NY (US);

Iqbal Rashid Saraf, Glenmont, NY (US);

Prasad Bhosale, Albany, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/126 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01);
Abstract

A semiconductor structure may include a heater surrounded by a second dielectric layer, a projection liner on top of the second dielectric layer, and a phase change material layer above the projection liner. A top surface of the projection liner may be substantially flush with a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.


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