The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Sep. 26, 2017
Intel Corporation, Santa Clara, CA (US);
Ying Pang, Portland, OR (US);
Florian Gstrein, Portland, OR (US);
Dan S. Lavric, Beaverton, OR (US);
Ashish Agrawal, Portland, OR (US);
Robert Niffenegger, Hillsboro, OR (US);
Padmanava Sadhukhan, Hillsboro, OR (US);
Robert W. Heussner, Portland, OR (US);
Joel M. Gregie, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Integrated circuit structures having differentiated workfunction layers are described. In an example, an integrated circuit structure includes a first gate electrode above a substrate. The first gate electrode includes a first workfunction material layer. A second gate electrode is above the substrate. The second gate electrode includes a second workfunction material layer different in composition from the first workfunction material layer. The second gate electrode does not include the first workfunction material layer, and the first gate electrode does not include the second workfunction material layer. A third gate electrode above is the substrate. The third gate electrode includes a third workfunction material layer different in composition from the first workfunction material layer and the second workfunction material layer. The third gate electrode does not include the first workfunction material layer and does not include the second workfunction material layer.