The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

Jun. 03, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yen Chun Lee, Boise, ID (US);

Karthik Sarpatwari, Boise, ID (US);

Nevil N. Gajera, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/42 (2006.01); G11C 29/44 (2006.01); G11C 16/34 (2006.01); G11C 29/12 (2006.01);
U.S. Cl.
CPC ...
G11C 29/42 (2013.01); G11C 16/3404 (2013.01); G11C 29/12005 (2013.01); G11C 29/44 (2013.01); G11C 2029/1202 (2013.01); G11C 2029/1204 (2013.01);
Abstract

Systems, methods and apparatus to implement bipolar read retry. In response to a determination that a first result of reading a set of memory cells using a first magnitude of read voltage is erroneous, a second magnitude of read voltage, greater than the first magnitude, is identified for the bipolar read retry. In the retry, a controller uses voltage drivers to apply, to the set of memory cells, first voltages of the second magnitude in a first polarity to obtain a second result of reading the set of memory cells and, after the second result is generated and in parallel with decoding the second result, apply second voltages of the second magnitude in a second polarity, opposite to the first polarity.


Find Patent Forward Citations

Loading…