The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Feb. 28, 2020
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Ruilong Xie, Niskayuna, NY (US);
Youngtag Woo, San Ramon, CA (US);
Daniel Chanemougame, Niskayuna, NY (US);
Bipul C. Paul, Mechanicville, NY (US);
Lars W. Liebmann, Mechanicville, NY (US);
Heimanu Niebojewski, Cohoes, NY (US);
Xuelian Zhu, San Jose, CA (US);
Lei Sun, Altamont, NY (US);
Hui Zang, Guilderland, NM (US);
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Abstract
One illustrative integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor with an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure and a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor. In this example, the product also includes a gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of each of the GSD contact structure and the gate contact structure is positioned at a first level that is at a level that is above a level of an upper surface of the insulating source/drain cap.