The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Jun. 18, 2020
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Qiguang Wang, Wuhan, CN;
Jiefei Fu, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A method for fabricating a memory device includes providing an initial semiconductor structure, including a base substrate, a stack structure of interlayer dielectric layers and first sacrificial layers; a channel trench formed through the stack structure. The method includes removing a portion of each first sacrificial layer from the channel trench to form a trapping-layer trench; forming a second sacrificial layer in the trapping-layer trench; forming a charge trapping film to fill the trapping-layer trench; and removing a portion of the charge trapping film from the channel trench to form a charge trapping layer; forming a tunneling layer and a channel layer on the sidewalls of the channel trench; removing the first sacrificial layers and the second sacrificial layer; forming a blocking layer on the charge trapping layer; and forming gate structures, in contact with the tunneling layer, between adjacent interlayer dielectric layers.