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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11469227 B1

PDFFull Text
Date of Patent:
Oct. 11, 2022

Filed:

Aug. 17, 2020

Semiconductor device and a method for fabricating the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Hao Chang, Hsin-Chu, TW;

Wen-Huei Guo, Hsinchu, TW;

Yi-Shien Mor, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Tucker J Wright

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 21/8234 (2006.01); H01L 23/485 (2006.01); H01L 27/02 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 23/485 (2013.01); H01L 27/0207 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/785 (2013.01); H01L 21/76816 (2013.01);
Abstract

A semiconductor device includes a first fin field effect transistor (FinFET) and a contact bar (source/drain (S/D) contact layer). The first FinFET includes a first fin structure extending in a first direction, a first gate structure extending in a second direction crossing the first direction, and a first S/D structure. The contact bar is disposed over the first S/D structure and extends in the second direction crossing the first S/D structure in plan view. The contact bar includes a first portion disposed over the first S/D structure and a second portion. The second portion overlaps no fin structure and no S/D structure. A width of the second portion in the first direction is smaller than a width of the first portion in the first direction in plan view.

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