The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Dec. 01, 2020
Applicants:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Tsmc China Company Limited, Shanghai, CN;

Inventors:

Xin-Yong Wang, Shanghai, CN;

Li-Chun Tien, Tainan, TW;

Chih-Liang Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/76816 (2013.01); H01L 23/5226 (2013.01);
Abstract

An integrated circuit includes a first transistor, a second transistor, a first power line, and a second power line. The first transistor has a first active region and a first gate structure, in which the first active region has a source region and a drain region on opposite sides of the first gate structure. The second transistor is below the first transistor, and has a second active region and a second gate structure, in which the second active region has a source region and a drain region on opposite sides of the second gate structure. The first power line is above the first transistor, in which the first power line is electrically connected to the source region of first active region. The second power line is below the second transistor, in which the second power line is electrically connected to the source region of second active region.


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