The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Sep. 23, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seong-Min Son, Hwaseong-si, KR;

Jeong-Gi Jin, Seoul, KR;

Jin-Ho An, Seoul, KR;

Jin-Ho Chun, Seoul, KR;

Kwang-Jin Moon, Hwaseong-si, KR;

Ho-Jin Lee, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/036 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03914 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05676 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/119 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/1181 (2013.01); H01L 2224/1191 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13176 (2013.01); H01L 2224/13184 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81801 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/9211 (2013.01);
Abstract

A semiconductor device includes a protective layer, a redistribution pattern, a pad pattern and an insulating polymer layer. The protective layer may be formed on a substrate. The redistribution pattern may be formed on the protective layer. An upper surface of the redistribution may be substantially flat. The pad pattern may be formed directly on the redistribution pattern. An upper surface of the pad pattern may be substantially flat. The insulating polymer layer may be formed on the redistribution pattern and the pad pattern. An upper surface of the insulating polymer layer may be lower than the upper surface of the pad pattern.


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