The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Feb. 08, 2021
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Lei L. Zhuang, Ridgefield, CT (US);
Balasubramanian Pranatharthiharan, Watervliet, NY (US);
Lars Liebmann, Poughquag, NY (US);
Ruilong Xie, Schenectady, NY (US);
Terence Hook, Jericho, VT (US);
Assignee:
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/823481 (2013.01); H01L 21/823814 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01); H01L 27/1104 (2013.01); H01L 29/7848 (2013.01);
Abstract
In a self-aligned fin cut process for fabricating integrated circuits, a sacrificial gate or an epitaxially-formed source/drain region is used as an etch mask in conjunction with a fin cut etch step to remove unwanted portions of the fins. The process eliminates use of a lithographically-defined etch mask to cut the fins, which enables precise and accurate alignment of the fin cut.