Silicon carbide ingot, method of preparing the same, and method for preparing silicon carbide wafer

Abstract

A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below:3≤37  [Equation 1]where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a length of a line of intersection between the first cross-sectional plane and the third cross-sectional plane.