The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

May. 24, 2019
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Zhong Zhang, Hubei, CN;

Wenyu Hua, Hubei, CN;

Bo Huang, Hubei, CN;

Zhiliang Xia, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11582 (2017.01); H01L 21/28 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 29/40117 (2019.08);
Abstract

Embodiments of staircase structures of a three-dimensional memory device and fabrication method thereof are disclosed. The semiconductor structure includes a first and a second film stacks, wherein the first film stack is disposed over the second film stack and has Mnumber of layers. The second film stack has Mnumber of layers. Mand Mare whole numbers. The semiconductor structure also includes a first and a second staircase structures, wherein the first staircase structure is formed in the first film stack and the second staircase structure is formed in the second film stack. The first and second staircase structures are next to each other with an offset.


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