The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Jun. 30, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chong-De Lien, Taoyuan, TW;
Shih-Hao Lin, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 29/775 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 21/02603 (2013.01); H01L 21/823821 (2013.01); H01L 29/0673 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/7851 (2013.01);
Abstract
Provided is a SRAM device including a pull-up device and a pull-down device. The pull-up device includes a plurality of first epitaxial source and drain (S/D) features on a first fin, and a plurality of first residues between the plurality of first epitaxial source and drain (S/D) features and the first fin. The pull-down device includes a plurality of second epitaxial S/D features on a second fin.