The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Feb. 22, 2021
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Chin-Chia Yang, Tainan, TW;

Fu-Yu Tsai, Tainan, TW;

Da-Jun Lin, Kaohsiung, TW;

Bin-Siang Tsai, Changhua County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 23/544 (2006.01); H01L 21/768 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/76898 (2013.01); H01L 23/544 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/50 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/0217 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/8013 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06593 (2013.01);
Abstract

A chip bonding alignment structure includes a semiconductor chip, a metal layer, an etching stop layer, at least one metal bump, a dielectric barrier layer, a silicon oxide layer, and a silicon carbonitride layer. The metal layer is disposed on a bonding surface of the semiconductor chip and has a metal alignment pattern. The etching stop layer covers the bonding surface and the metal layer. The metal bump extends upward from the metal layer and penetrates through the etching stop layer. The dielectric barrier layer covers the etching stop layer and the metal bump. The silicon oxide layer covers the dielectric barrier layer. The silicon carbonitride layer covers the silicon oxide layer.


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