The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Sep. 28, 2020
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Burton Jesse Carpenter, Austin, TX (US);

Fred T. Brauchler, Canton, MI (US);

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/64 (2006.01); H01L 23/64 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/645 (2013.01); H01L 21/4853 (2013.01); H01L 21/565 (2013.01); H01L 23/3128 (2013.01); H01L 23/367 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 24/48 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19103 (2013.01);
Abstract

A semiconductor device package having galvanic isolation is provided. The semiconductor device package includes a package substrate having a first inductive coil. A first semiconductor die is attached to a first major surface of the package substrate. The first semiconductor die includes a second inductive coil substantially aligned with the first inductive coil. A second semiconductor die is attached to the first major surface of the package substrate. A wireless communication link between the first semiconductor die and the second semiconductor die is formed by way of the first and second inductive coils.


Find Patent Forward Citations

Loading…