The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Dec. 17, 2019
Applicant:
Hitachi High-tech Corporation, Tokyo, JP;
Inventors:
Miyako Matsui, Tokyo, JP;
Kenichi Kuwahara, Tokyo, JP;
Tatehito Usui, Tokyo, JP;
Hiroyuki Kobayashi, Tokyo, JP;
Assignee:
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32174 (2013.01); H01J 37/32926 (2013.01); H01L 21/31144 (2013.01); H01J 2237/3341 (2013.01);
Abstract
Provided is a plasma processing method for plasma etching an etching target film formed on a sample. The method includes a protective film forming step of selectively forming a protective film on an upper portion of a pattern formed on the sample and adjusting a width of the formed protective film such that a distribution of the width of the formed protective film in a surface of the sample becomes a desired distribution, and a step of plasma etching the etching target film after the protective film forming step.