The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Oct. 25, 2019
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Laertis Economikos, Wappingers Falls, NY (US);
Shesh Mani Pandey, Saratoga Springs, NY (US);
Hui Zang, Guilderland, NY (US);
Haiting Wang, Clifton Park, NY (US);
Jinping Liu, Ballston Lake, NY (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
A transistor device disclosed herein includes, among other things, a gate electrode positioned above a semiconductor material region, a sidewall spacer positioned adjacent the gate electrode, a gate insulation layer having a first portion positioned between the gate electrode and the semiconductor material region and a second portion positioned between a lower portion of the sidewall spacer and the gate electrode along a portion of a sidewall of the gate electrode, an air gap cavity located between the sidewall spacer and the gate electrode and above the second portion of the gate insulation layer, and a gate cap layer positioned above the gate electrode, wherein the gate cap layer seals an upper end of the air gap cavity so as to define an air gap positioned adjacent the gate electrode.