The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Apr. 22, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Hsien Lin, Hsinchu, TW;
Chang-Ching Yeh, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a fin structure extending above a substrate; forming dummy gate structures extending across the fin structure, each of the dummy gate structures including a dummy gate electrode layer and a hard mask layer over the dummy gate electrode layer; performing an ion implantation process to dope the hard mask layers of the dummy gate structures; after performing the ion implantation process to dope the hard mask layers of the dummy gate structures, performing a first etching process to etch a source/drain region of the fin structure between the dummy gate structures to form a recess in the source/drain region of the fin structure; forming an epitaxial structure in the recess; and replacing the dummy gate structures with metal gate structures.