The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Jul. 17, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Scott J. Derner, Boise, ID (US);
Charles L. Ingalls, Meridian, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); G11C 11/407 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 27/108 (2006.01); G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); G11C 5/025 (2013.01); G11C 11/407 (2013.01); H01L 27/10814 (2013.01); H01L 27/10855 (2013.01); H01L 29/0653 (2013.01); H01L 29/402 (2013.01); H01L 29/4238 (2013.01); H01L 29/7835 (2013.01);
Abstract
Some embodiments include an integrated assembly having an access transistor. The access transistor has a first source/drain region gatedly coupled with a second source/drain region. A digit line is coupled with the first source/drain region. A charge-storage device is coupled with the second source/drain region through an interconnect. The interconnect includes a length of a semiconductor material. A protective transistor gates a portion of the length of the semiconductor material.