The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Apr. 14, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Kuo-Hsing Lee, Hsinchu County, TW;
Kun-Hsien Lee, Tainan, TW;
Sheng-Yuan Hsueh, Tainan, TW;
Chang-Chien Wong, Tainan, TW;
Ching-Hsiang Tseng, Tainan, TW;
Tsung-Hsun Wu, Kaohsiung, TW;
Chi-Horn Pai, Tainan, TW;
Shih-Chieh Hsu, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The invention provides a semiconductor memory cell, the semiconductor memory cell includes a substrate having a first conductivity type, a doped region in the substrate, wherein the doped region has a second conductivity type, and the first conductivity type is complementary to the second conductivity type, a capacitor insulating layer and an upper electrode on the doped region, a transistor on the substrate, and a shallow trench isolation disposed between the transistor and the capacitor insulating layer, and the shallow trench isolation is disposed in the doped region.