The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Apr. 22, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Gu-Huan Li, Hsinchu, TW;

Chen-Ming Hung, Hsinchu, TW;

Yu-Der Chih, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01); G11C 17/18 (2006.01); G11C 17/16 (2006.01); G11C 8/10 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 17/18 (2013.01); G11C 7/1069 (2013.01); G11C 7/1096 (2013.01); G11C 8/10 (2013.01); G11C 17/16 (2013.01);
Abstract

A memory circuit includes a first bank of non-volatile memory (NVM) devices, a first plurality of decoders, a first plurality of high-voltage (HV) drivers corresponding to the first plurality of decoders, and a first plurality of HV power switches. A first HV power switch is coupled to each HV driver of the first plurality of HV drivers, and each decoder is configured to generate an enable signal corresponding to a column of the first bank of NVM devices. Each HV driver is configured to output a HV activation signal to the corresponding column of the first bank of NVM devices responsive to a power signal of the first HV power switch and to the enable signal of the corresponding decoder.


Find Patent Forward Citations

Loading…