The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Sep. 05, 2019
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Takayuki Fujiwara, Joetsu, JP;
Masaki Ohashi, Joetsu, JP;
Kazuhiro Katayama, Joetsu, JP;
Kenji Yamada, Joetsu, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); C07C 59/115 (2006.01); G03F 7/039 (2006.01); G03F 7/038 (2006.01); C07D 207/27 (2006.01); C07C 43/225 (2006.01); C08F 220/16 (2006.01); C08F 220/28 (2006.01); C08F 212/14 (2006.01); C09D 133/08 (2006.01); C09D 133/14 (2006.01); C09D 125/14 (2006.01); C07C 25/18 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0045 (2013.01); C07C 25/18 (2013.01); C07C 43/225 (2013.01); C07C 59/115 (2013.01); C07D 207/27 (2013.01); C08F 212/14 (2013.01); C08F 220/16 (2013.01); C08F 220/28 (2013.01); C09D 125/14 (2013.01); C09D 133/08 (2013.01); C09D 133/14 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); C08F 220/283 (2020.02); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/2006 (2013.01); G03F 7/2037 (2013.01); G03F 7/2041 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01);
Abstract
A novel carboxylic acid iodonium salt and a resist composition comprising the same as a quencher are provided. When resist composition is processed by photolithography using KrF or ArF excimer laser, EB or EUV, there is formed a resist pattern which is improved in rectangularity, MEF, LWR, and CDU.