The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2022

Filed:

Sep. 05, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ching-Huang Chen, New Taipei, TW;

Chi-Yuan Sun, New Taipei, TW;

Hua-Tai Lin, Hsinchu, TW;

Hsin-Chang Lee, Zhubei, TW;

Ming-Wei Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01);
Abstract

A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, a photo catalytic layer disposed on the capping layer, and an absorber layer disposed on the photo catalytic layer and carrying circuit patterns having openings. Part of the photo catalytic layer is exposed at the openings of the absorber layer, and the photo catalytic layer includes one selected from the group consisting of titanium oxide (TiO), tin oxide (SnO), zinc oxide (ZnO) and cadmium sulfide (CdS).


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