The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Jun. 21, 2021
Nxp Usa, Inc., Austin, TX (US);
Laurent Segarra, Tournefeuille, FR;
Maarten Jacobus Swanenberg, Berg en Dal, NL;
Pierre Turpin, Toulouse, FR;
Matthew Bacchi, Saveres, FR;
Russell Schaller, Gilbert, AZ (US);
Keith Jackoski, Chandler, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
NXP USA, INC., Austin, TX (US);
Abstract
A testing method and apparatus is disclosed for testing an integrated circuit device () which has a dedicated ground bias pad () connected across a high voltage electrostatic discharge clamp circuit () to a well-driving ground pad () by applying a first voltage to the dedicated ground bias pad to bias a wafer substrate () while simultaneously applying a second voltage to the well-driving ground pad to bias the well region (), where the first and second voltage create a stressing voltage across a buried insulator layer () in the integrated circuit device so that a screening test can be conducted to screen for a defect () in the buried insulator layer by measuring a leakage current.