The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Nov. 20, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66742 (2013.01); H01L 21/7624 (2013.01); H01L 29/0847 (2013.01); H01L 29/42392 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66787 (2013.01); H01L 29/78603 (2013.01); H01L 29/78696 (2013.01); H01L 21/02236 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/2253 (2013.01); H01L 21/26533 (2013.01); H01L 29/0673 (2013.01);
Abstract
A semiconductor structure includes a semiconductor substrate, an oxide layer disposed over the semiconductor substrate, a high-k metal gate structure (HKMG) interleaved with the stack of semiconductor layers, and an epitaxial source/drain (S/D) feature disposed adjacent to the HKMG, wherein a bottom portion of the epitaxial S/D feature is defined by the oxide layer.