The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Aug. 03, 2020
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Robert J. Gauthier, Jr., Williston, VT (US);
Alain F. Loiseau, Williston, VT (US);
Souvick Mitra, Essex Junction, VT (US);
Tsung-Che Tsai, New York, NY (US);
Meng Miao, Williston, VT (US);
You Li, South Burlington, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Embodiments of the disclosure provide an integrated circuit (IC) structure, including a doped well in a semiconductor substrate, in addition to a base region, emitter region, and collector region in the doped well. An insulative material is within the doped well, with a first end horizontally adjacent the collector region and a second end opposite the first end. A doped semiconductor region is within the doped well adjacent the second end of the insulative material. The doped semiconductor region is positioned to define an avalanche junction between the collector region and the doped semiconductor region across the doped well.