The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Jan. 25, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hung-Wei Li, Hsinchu, TW;
Yu-Ming Lin, Hsinchu, TW;
Mauricio Manfrini, Hsinchu County, TW;
Sai-Hooi Yeong, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A transistor includes a gate, a channel layer, a gate insulation layer, a passivation layer, a liner, a first signal line, and a second signal line. The first signal line is embedded in the passivation layer to form a first via in the passivation layer and overlapping the channel layer. The second signal line is embedded in the passivation layer to form a second via in the passivation layer overlapping the channel layer. The second signal line is in contact with the channel layer. The liner includes an insulation region and a conductive region connected with the insulation region. The insulation region is disposed over the passivation layer and on sidewalls of the first via. The conductive region is disposed under a bottom of the first via and connected with the channel layer. The first signal line is electrically connected with the channel layer through the conductive region.