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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11443983 B1

PDFFull Text
Date of Patent:
Sep. 13, 2022

Filed:

Sep. 24, 2018

Void-free high aspect ratio metal alloy interconnects and method of manufacture using a solvent-based etchant

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Shaestagir Chowdhury, Portland, OR (US);

Sirikarn Surawanvijit, Portland, OR (US);

Biswadeep Saha, Beaverton, OR (US);

Erica J. Thompson, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Schwabe, Williamson & Wyatt, P.C.

Primary Examiner:

Robert G Bachner

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 23/532 (2006.01); C22C 19/03 (2006.01); C22C 19/07 (2006.01); H01L 23/522 (2006.01); C09K 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); C22C 19/03 (2013.01); C22C 19/07 (2013.01); H01L 21/32134 (2013.01); H01L 21/76843 (2013.01); H01L 23/5226 (2013.01); H01L 23/53261 (2013.01); C09K 13/00 (2013.01);
Abstract

An integrated circuit structure comprises a dielectric layer on a substrate. An open structure is in the dielectric layer, and a void-free metal-alloy interconnect is formed in the open structure, wherein the void-free metal-alloy interconnect comprise a metal-alloy comprising a combination of two or more metallic elements excluding any mixing effects of a seed layer or liner deposited in the open structure prior to a metal fill material, and excluding effects of any doping material on the metal fill material.

Find Patent Forward Citations

Chowdhury, Shaestagir. (2022). Void-free high aspect ratio metal alloy interconnects and method of manufacture using a solvent-based etchant (U.S. Patent No. 11443983). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11443983

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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