The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Nov. 08, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Andrew Greene, Albany, NY (US);

Ruilong Xie, Schenectady, NY (US);

Laertis Economikos, Wappingers Falls, NY (US);

Veeraraghavan S. Basker, Schenectady, NY (US);

Chanro Park, Clifton Park, NY (US);

Hui Zang, Guilderland, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76832 (2013.01); H01L 21/823431 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device includes one or more fins extending from a substrate, the one or more fins having source/drain epitaxial grown material (S/D epitaxy) thereon that merges one or more fins, a gate formed over the one or more fins, the gate including high k metal gate disposed between gate spacers and a metal liner over the S/D epitaxy and sides of the gate spacers. The gate includes a self-aligned contact cap over the HKMG and the metal liner.


Find Patent Forward Citations

Loading…