The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Mar. 18, 2020
Applicant:

Applied Materials, Inc, Santa Clara, CA (US);

Inventors:

Mingwei Zhu, San Jose, CA (US);

Zihao Yang, Santa Clara, CA (US);

Nag B. Patibandla, Pleasanton, CA (US);

Ludovic Godet, Sunnyvale, CA (US);

Yong Cao, San Jose, CA (US);

Daniel Lee Diehl, Chiba, JP;

Zhebo Chen, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 39/24 (2006.01); H01L 39/12 (2006.01); H01L 39/22 (2006.01); C23C 14/54 (2006.01); C23C 14/34 (2006.01); G01J 1/44 (2006.01);
U.S. Cl.
CPC ...
H01L 39/2496 (2013.01); C23C 14/3464 (2013.01); C23C 14/54 (2013.01); H01L 39/125 (2013.01); H01L 39/225 (2013.01); G01J 1/44 (2013.01); G01J 2001/442 (2013.01);
Abstract

A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.


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