The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
May. 21, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Ming-Ho Lin, Taipei, TW;
Cheng-I Lin, Hsinchu, TW;
Chun-Heng Chen, Hsinchu, TW;
Chi On Chui, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/0228 (2013.01); H01L 21/02274 (2013.01); H01L 29/0653 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/32134 (2013.01); H01L 21/32135 (2013.01);
Abstract
A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.