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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11437374 B1

PDFFull Text
Date of Patent:
Sep. 06, 2022

Filed:

Sep. 28, 2020

Semiconductor device and stacked semiconductor chips including through contacts

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Shaofeng Ding, Suwon-si, KR;

Minguk Kang, Busan, KR;

Jihyung Kim, Seoul, KR;

Jeong Hoon Ahn, Seongnam-si, KR;

Haeri Yoo, Hwaseong-si, KR;

Yun Ki Choi, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Gyeongggi-Do, unknown;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Sonya McCall-Shepard

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 25/065 (2006.01); H01L 27/02 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 27/088 (2006.01); H01L 29/165 (2006.01); H01L 29/08 (2006.01); B82Y 10/00 (2011.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/775 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01); H01L 25/18 (2006.01); H01L 21/8234 (2006.01); H01L 27/108 (2006.01); H01L 27/11 (2006.01); H01L 23/485 (2006.01); H01L 23/48 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 25/0657 (2013.01); H01L 27/0207 (2013.01); H01L 29/4175 (2013.01);
Abstract

A semiconductor device includes a substrate including a logic cell region and a connection region, a dummy transistor on the connection region, an intermediate connection layer on the dummy transistor, a first metal layer on the intermediate connection layer, an etch stop layer between the intermediate connection layer and the first metal layer, a through contact below the first metal layer penetrating the connection region, an upper portion of the through contact protruding above the etch stop layer, and a protection insulating pattern on the etch stop layer covering the upper portion of the through contact. The protection insulating pattern covers an upper side surface of the through contact and a top surface of the through contact.

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