The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Oct. 15, 2020
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Yuanzheng Yue, Chandler, AZ (US);

James Allen Teplik, Mesa, AZ (US);

Bruce McRae Green, Gilbert, AZ (US);

Fred Reece Clayton, Mesa, AZ (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 29/401 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01);
Abstract

A device includes a substrate, an insulating layer that includes an etch stop layer formed over an upper surface of the substrate, a first conductive region formed over the insulating layer, and an opening formed within the substrate that extends from a lower surface of the substrate, through the upper surface of the substrate, and through at least a portion the insulating layer, terminating on the first conductive region. A method for forming the device includes forming the substrate, forming the insulating layer that includes the etch stop layer over the upper surface of the substrate, forming a first conductive region over the insulating layer; and forming an opening within the substrate that extends from the lower surface of the substrate, through the upper surface of the substrate, and through at least a portion the insulating layer, terminating on the first conductive region formed over the insulating layer.


Find Patent Forward Citations

Loading…