The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Sep. 04, 2020
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Hui Zang, Guilderland, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 27/088 (2006.01); H01L 29/165 (2006.01); H01L 21/8234 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823475 (2013.01); H01L 21/31116 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/4175 (2013.01); H01L 29/41791 (2013.01); H01L 21/0274 (2013.01); H01L 21/02532 (2013.01); H01L 21/31053 (2013.01); H01L 21/31144 (2013.01); H01L 21/3212 (2013.01); H01L 29/165 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to middle of line structures and methods of manufacture. The structure includes: a plurality of gate structures; source and drain regions adjacent to respective gate structures of the plurality of gate structures; metallization features contacting selected source and drain regions; and recessed metallization features contacting other selected source and drain regions.