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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11437278 B1

PDFFull Text
Date of Patent:
Sep. 06, 2022

Filed:

Aug. 04, 2020

Method for forming semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chang-Yun Chang, Taipei, TW;

Bone-Fong Wu, Hsinchu, TW;

Ming-Chang Wen, Kaohsiung, TW;

Ya-Hsiu Lin, Taoyuan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Nilufa Rahim

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/311 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/027 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/0217 (2013.01); H01L 21/02156 (2013.01); H01L 21/31111 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01); H01L 21/0274 (2013.01); H01L 21/26513 (2013.01); H01L 21/31053 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 29/6656 (2013.01);
Abstract

A method of forming a semiconductor device includes forming a gate structure over first and second fins over a substrate; forming an interlayer dielectric layer surrounding first and second fins; etching a first trench in the interlayer dielectric layer between the first and second fins uncovered by the gate structure; forming a helmet layer lining the first trench; and forming a dielectric feature in the first trench.

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Chang, Chang-Yun. (2022). Method for forming semiconductor device (U.S. Patent No. 11437278). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11437278

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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